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Lead halide perovskite materials have caught lot of attention because of its usage in developing novel photovoltaics with effeciencies exceeding 22 %. This level of optoelectronic performance has been possible due to clean band-gap, low disorder and various interesting properties. Despite the development of high efficiency optoelectronic devices, clear understanding of the charge transport and scattering mechanism has not yet been understood. Field effect transistors are an effective way to understand the charge transport mechanism. In the talk, I will describe the development of first room temperature operating field effect transistor with lead iodide perovskite through a combination of material and device engineering. Fundamental understanding of the various scattering mechanisms involved in the charge transport physics is then development through a combination of electrical and spectroscopic investigation [1].
The next part of the talk is on understanding the charge transport of polymer semiconductors. With suitable chemical design, interface and device engineering it was possible to approach disorder free transport in these inherently amorphous materials. Furthermore, a range of strategies would be discussed which allow flexible polymer logic circuits with with switching speed of 10 MHz, operating at 1 V and have a power consumption as low as 10 nW. These characteristics make the flexible polymer devices to have performance comparable or better than a-Si devices[2-3].
References:
1. Satyaprasad P Senanayak, Richard Friend, Henning Sirringhaus et.al.; Science, AAAS (Accepted).
2. Satyaprasad P Senanayak and Narayan K.S; Adv. Funct. Materials, 24, 22, 3331,2015.
3. Satyaprasad P Senanayak and Narayan K.S; Phys. Rev. B, B 91, 115302, 2016. |