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The existing alignments and patterning techniques using various lithographic routes have limitations in achieving ultrahigh density assembly of nanomaterials owing to their application limit. A two dimensional interfacial techniques, namely Langmuir Blodgett technique, can be used as an alternative route to overcome the application limit of lithography for achieving ultra high density hierarchical assembly. The 2D surface-pressure decreases the activation energy of cooperative oriented chemical coalescence reactions for nanorods to nanowires and nanowires to 2D nanosheets conversion at ambient temperature (1). The process leads fabricating well-controlled patterns promising for potential applications in miniaturized electronics. Furthermore, Langmuir Blodgett technique is explored to obtain supramolecular assemblies of aggregation-induced-emission (AIE) active complexes at the air-water interface. Owing to the confined geometry within the supramolecular assembly, restriction of intramolecular vibration and rotations of the AIE complexes occur facilitating strong AIE effect (2). As a consequence, a large enhancement of luminescence comparable to the solid state can be obtained from the supramolecular aggregates. The unique aggregation feature is utilized for the fabrication of light emitting diodes with low threshold voltage using supramolecular assemblies as active layer. |