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Van der Waals (vdW) heterostructures are emerging materials that tune fundamental
and technological applications with exotic physical properties. Recently, some of these
materials have shown quantum superconductivity, topological nature, anomalous quantum Hall
effect and many more. There is plenty of scopes to explore on these materials for a wide variety
of properties for future technology. The most appealing route to engineer a vdW heterostructure
is by building the “contact” between the two dimensional (2D) semiconductor and metal
electrodes, which governs the charge carrier injection dynamics from metal to 2D channel.
Introducing a lattice mismatch or a rotation misalignment between the 2D layers generates a
moire superlattice with new length and energy scales. The science behind moire superlattices
can be explored with carrier doping or the external electric field for electron-electron
correlations. The proposed talk will discuss device physics’s challenges and possible outcomes
as well as correlated phenomena in functional heterostructures. Also, I will present the
interfacing (both vdW and Edge) model between metal and semiconductors for exploring
Fermi level pinning and the transport probabilities. Later, I will briefly discuss the design of
double moire superlattices and the crucial role of relaxation effects using molecular dynamics
to understand the flat band physics. |