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All of the members of 2D hexagonal Xenes shows buckling, except for graphene. Due to the alteration of the time-reversal symmetry through the combined effects of the spin-orbit coupling and the buckling and the perpendicular electric field, the material behaves as a topological insulator under certain conditions and exhibit conductive edge states. This material can be used to construct a transistor controlled by an application of a perpendicular electric field through gate electrodes. There are evidence that by altering the biasing scheme or introducing anti-ferromagnetism can substantially improve the switching mechanism of such transistor that the sub-threshold slope can be lowered under that allowed by the thermionic limit. The study momentum relaxation process on such devices, however, is an important one, since although the topologically protected edge states are ideally expected to be unaltered by the scattering impurity, an estimation of how well it performs under such relaxation is beneficial to evaluate its robustness. It has been discovered that the leakage currents in these transistors are magnified with the introduction of such impurities. Thus, an analysis of how much the sub-threhold slopes degrade under such impurity is beneficial for determining the best candidate among such devices. |